IEDM call for papers
- Auteur:Ella Cai
- Relâchez le:2017-05-12
The paper submission deadline this year is Wednesday, August 2, 2017.
IEDM will take place at the Hilton San Francisco Union Square hotel from December 2-6, 2017.
For the second year running, the IEDM submission deadline is about 1½ months later than what had been the norm, reducing the time between paper submissions and publication of the research results.
Authors are asked to submit four-page camera-ready abstracts (instead of the traditional three pages), which will be published as-is in the proceedings.
Only a very limited number of late-news papers will be accepted. Authors are asked to submit late-news abstracts announcing only the most recent and noteworthy developments. The late-news submission deadline is September 11, 2017.
“Based on the success of the later paper-submission deadline last year, we have decided to make it an IEDM tradition,” says Dr. Barbara DeSalvo, Chief Scientist at Leti,
“this helps ensure a rich and unique technical program.”
At IEDM each year, the world’s best scientists and engineers in the field of microelectronics gather to participate in a technical program consisting of more than 220 presentations, along with special luncheon presentations and a variety of panels, special sessions, Short Courses, IEEE/EDS award presentations and other events highlighting leading work in more areas of the field than any other conference.
This year special emphasis is placed on the following topics:
• Advanced memory technologies
• More-than-Moore device concepts
• Neuromorphic computing/machine learning
• Optoelectronics, photonics, displays and imaging systems
• Package-device level interactions
• Sensors and MEMS devices for biological/medical applications
• Spin for memory and logic
• Steep subthreshold devices
• Technologies for 5nm and beyond
Overall, papers in the following areas of technology are encouraged:
• Circuit and Device Interaction
• Characterization, Reliability and Yield
• Compound Semiconductor and High-Speed Devices
• Memory Technology
• Modeling and Simulation
• Nano Device Technology
• Optoelectronics, Displays and Imagers
• Power Devices
• Process and Manufacturing Technology
• Sensors, MEMS and BioMEMS
IEDM will take place at the Hilton San Francisco Union Square hotel from December 2-6, 2017.
For the second year running, the IEDM submission deadline is about 1½ months later than what had been the norm, reducing the time between paper submissions and publication of the research results.
Authors are asked to submit four-page camera-ready abstracts (instead of the traditional three pages), which will be published as-is in the proceedings.
Only a very limited number of late-news papers will be accepted. Authors are asked to submit late-news abstracts announcing only the most recent and noteworthy developments. The late-news submission deadline is September 11, 2017.
“Based on the success of the later paper-submission deadline last year, we have decided to make it an IEDM tradition,” says Dr. Barbara DeSalvo, Chief Scientist at Leti,
“this helps ensure a rich and unique technical program.”
At IEDM each year, the world’s best scientists and engineers in the field of microelectronics gather to participate in a technical program consisting of more than 220 presentations, along with special luncheon presentations and a variety of panels, special sessions, Short Courses, IEEE/EDS award presentations and other events highlighting leading work in more areas of the field than any other conference.
This year special emphasis is placed on the following topics:
• Advanced memory technologies
• More-than-Moore device concepts
• Neuromorphic computing/machine learning
• Optoelectronics, photonics, displays and imaging systems
• Package-device level interactions
• Sensors and MEMS devices for biological/medical applications
• Spin for memory and logic
• Steep subthreshold devices
• Technologies for 5nm and beyond
Overall, papers in the following areas of technology are encouraged:
• Circuit and Device Interaction
• Characterization, Reliability and Yield
• Compound Semiconductor and High-Speed Devices
• Memory Technology
• Modeling and Simulation
• Nano Device Technology
• Optoelectronics, Displays and Imagers
• Power Devices
• Process and Manufacturing Technology
• Sensors, MEMS and BioMEMS
