Samsung completes 8Gb LPDDR5 development
- Auteur:Ella Cai
- Relâchez le:2018-07-17
Samsung says it has developed 10nm class 8Gb LPDDR5 DRAM and will move it into production at at its latest fab at Pyeongtaek in line with customer demand.
8Gb LPDDR4 started mass production in 2014. 8Gb LPDDR5 Joins Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).
“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” says Samsung’s Jinman Han.
The 8Gb LPDDR5 hasa data rate of up to 6,400 Mb/s, which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s).
With the increased transfer rate, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.
The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V,
This performance improvement has come from several architectural enhancements. By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.
To maximize power savings, the 10nm-class LPDDR5 has been engineered to lower its voltage in accordance with the operating speed of the corresponding application processor, when in active mode.
It also has been configured to avoid overwriting cells with ‘0’ values.
In addition, the new LPDDR5 chip will offer a ‘deep sleep mode’, which cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM.
Thanks to these low-power features, the 8Gb LPDDR5 DRAM will deliver power consumption reductions of up to 30%, maximizing mobile device performance and extending the battery life of smartphones.
Based on its industry-leading bandwidth and power efficiency, the LPDDR5 will be able to power AI and machine learning applications, and will be UHD-compatible for mobile devices worldwide.
Samsung, together with leading global chip vendors, has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips.
Leveraging the cutting-edge manufacturing infrastructure at its latest line in Pyeongtaek, Korea, Samsung plans to begin mass production of its next-generation DRAM lineups (LPDDR5, DDR5 and GDDR6) in line with the demands of global customers.
8Gb LPDDR4 started mass production in 2014. 8Gb LPDDR5 Joins Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).
“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” says Samsung’s Jinman Han.
The 8Gb LPDDR5 hasa data rate of up to 6,400 Mb/s, which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s).
With the increased transfer rate, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.
The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V,
This performance improvement has come from several architectural enhancements. By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.
To maximize power savings, the 10nm-class LPDDR5 has been engineered to lower its voltage in accordance with the operating speed of the corresponding application processor, when in active mode.
It also has been configured to avoid overwriting cells with ‘0’ values.
In addition, the new LPDDR5 chip will offer a ‘deep sleep mode’, which cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM.
Thanks to these low-power features, the 8Gb LPDDR5 DRAM will deliver power consumption reductions of up to 30%, maximizing mobile device performance and extending the battery life of smartphones.
Based on its industry-leading bandwidth and power efficiency, the LPDDR5 will be able to power AI and machine learning applications, and will be UHD-compatible for mobile devices worldwide.
Samsung, together with leading global chip vendors, has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips.
Leveraging the cutting-edge manufacturing infrastructure at its latest line in Pyeongtaek, Korea, Samsung plans to begin mass production of its next-generation DRAM lineups (LPDDR5, DDR5 and GDDR6) in line with the demands of global customers.
