GloFo has enhanced PDKs for multi-band RF switching
- 著者:Ella Cai
- 公開：:2017-09-19
Globalfoundries has launched enhanced RF SOI PDKs optimised for multi-band RF switching in smartphones and IoT.
Designed for use with Coupling Wave Solutions’ (CWS) simulation tool, SiPEX, GloFo’s 7SW SOI PDK allows designers to integrate RF switches with other critical RF blocks that are essential to the design of complex electronic systems for future RF communication chips. Specifically, this new capability allows designers to improve RF simulation output by simulating a highly-resistive substrate parasitic effect across their entire design.
“CWS’ SiPEX tool provides our customers with best-in-class correlation between simulated results and real world measurements, further optimizing the design layout to achieve efficiency and deliver differentiated RF front-end solutions,” says GloFo’s Bami Bastani
GF’s RF SOI technologies offer significant performance, integration and area advantages in front-end RF solutions for mobile devices and RF chips for high-frequency, high-bandwidth wireless infrastructure applications.
CWS’ SiPEX accelerates the design of RF SOI switches by improving linearity simulation accuracy. It can also be effective in the design of low-noise amplifiers (LNA) and power amplifiers (PA), enabling designers to reduce their size to lower costs
SiPEX is available in the current release of GF’s 7SW SOI PDK.
See also: Globalfoundries demonstrates 2.5D package for 14nm and 7nm finfet
Designed for use with Coupling Wave Solutions’ (CWS) simulation tool, SiPEX, GloFo’s 7SW SOI PDK allows designers to integrate RF switches with other critical RF blocks that are essential to the design of complex electronic systems for future RF communication chips. Specifically, this new capability allows designers to improve RF simulation output by simulating a highly-resistive substrate parasitic effect across their entire design.
“CWS’ SiPEX tool provides our customers with best-in-class correlation between simulated results and real world measurements, further optimizing the design layout to achieve efficiency and deliver differentiated RF front-end solutions,” says GloFo’s Bami Bastani
GF’s RF SOI technologies offer significant performance, integration and area advantages in front-end RF solutions for mobile devices and RF chips for high-frequency, high-bandwidth wireless infrastructure applications.
CWS’ SiPEX accelerates the design of RF SOI switches by improving linearity simulation accuracy. It can also be effective in the design of low-noise amplifiers (LNA) and power amplifiers (PA), enabling designers to reduce their size to lower costs
SiPEX is available in the current release of GF’s 7SW SOI PDK.
See also: Globalfoundries demonstrates 2.5D package for 14nm and 7nm finfet
