IBM, Samsung, Globalfoundries develop 5nm GAAFET IC.
- 著者:Ella Cai
- 公開：:2017-06-05
IBM, Samsung and GlobalFoundries have made 5nm ICs using gate-all-around (GAA) transistors and EUV lithography.
The transistor technology, dubbed GAAFET, is a finfet with a horizontal fin which becomes a silicon nanowire (or nanosheet) stretched between the source and drain.
The IBM/Samsung/ GloFo GAAFET has three nanosheets stacked on top of each other running between the source and drain.
The result is a comparatively large volume of gate and channel material which makes the GAAFET reliable, high-performance, and better for scaling.
The transistor technology, dubbed GAAFET, is a finfet with a horizontal fin which becomes a silicon nanowire (or nanosheet) stretched between the source and drain.
The IBM/Samsung/ GloFo GAAFET has three nanosheets stacked on top of each other running between the source and drain.
The result is a comparatively large volume of gate and channel material which makes the GAAFET reliable, high-performance, and better for scaling.
