Infineon introduces 6th gen CoolSiC
- 著者:Ella Cai
- 公開：:2017-09-28
Infineon has brought out the CoolSiC Schottky diode 650 V G6 to complement the 600 V and 650 V CoolMOS 7 families.
They are aiming at current and future applications in Server and PC power, Telecom equipment power, and PV inverters.
The CoolSiC Schottky diode 650 V G6 has a new layout, new cell structure, and a new proprietary Schottky metal system.
The result is an industry benchmark V F (1.25 V), and a Q c x V F figure of merit (FOM) which is 17% lower than the previous generation.
In addition, the G6 diode makes use of the SiC strong characteristics of temperature independent switching behavior and no reverse recovery charge.
The design of the device provides improved efficiency over all load conditions along with increased system power density.
Thus, the CoolSiC Schottky diode 650 V G6 features reduced cooling requirements, increased system reliability, and extremely fast switching. The new device is the SiC diode generation with the best price performance.
They are aiming at current and future applications in Server and PC power, Telecom equipment power, and PV inverters.
The CoolSiC Schottky diode 650 V G6 has a new layout, new cell structure, and a new proprietary Schottky metal system.
The result is an industry benchmark V F (1.25 V), and a Q c x V F figure of merit (FOM) which is 17% lower than the previous generation.
In addition, the G6 diode makes use of the SiC strong characteristics of temperature independent switching behavior and no reverse recovery charge.
The design of the device provides improved efficiency over all load conditions along with increased system power density.
Thus, the CoolSiC Schottky diode 650 V G6 features reduced cooling requirements, increased system reliability, and extremely fast switching. The new device is the SiC diode generation with the best price performance.
