Infineon sampling 650V TRENCHSTOP IGBT6
- 著者:Ella Cai
- 公開：:2018-08-14
Infineon is sampling its latest TRENCHSTOP IGBT6 technology with a 650 V blocking voltage.
The trench and field-stop technology co-packed with a soft, fast recovery anti-parallel Rapid 1 diode translates into reduced losses.
The building block for motor drives up to 1 kW is marked by a good thermal performance, especially at higher switching frequencies improving reliability and design margin.
Key features of the 650 V TRENCHSTOP IGBT6 are very low V CE(sat) and V f as well as a short-circuit protection capability of 3 μsec.
It is optimized for switching frequencies ranging between 5 kHz and 30 kHz and suitable for applications that need to control the EMI noise efficiently.
Sampling now are current classes from 8 to 15 A in a TO-220FP package. Other package types will be introduced 2019.
The trench and field-stop technology co-packed with a soft, fast recovery anti-parallel Rapid 1 diode translates into reduced losses.
The building block for motor drives up to 1 kW is marked by a good thermal performance, especially at higher switching frequencies improving reliability and design margin.
Key features of the 650 V TRENCHSTOP IGBT6 are very low V CE(sat) and V f as well as a short-circuit protection capability of 3 μsec.
It is optimized for switching frequencies ranging between 5 kHz and 30 kHz and suitable for applications that need to control the EMI noise efficiently.
Sampling now are current classes from 8 to 15 A in a TO-220FP package. Other package types will be introduced 2019.
