Infineon shipping 200V gate-driver in SOIC-8
- 著者:Ella Cai
- 公開：:2018-09-07
Infineon is shipping a 200V half-bridge gate driver IC in a standard SOIC-8 (DSO-8) package.
It is a new member of the EiceDRIVER 200 V level-shift gate driver family.
Featuring undervoltage-lockout (UVLO) for V CC and V BS, the IRS2007S is tailored for low voltage (24 V, 36 V, and 48 V) and medium voltage (60 V, 80 V, 100 V, and 120 V) motor control applications in battery driven devices.
They are typically found in power tools, household and garden equipment, as well as in light electric vehicles such as e-bikes and e-scooters, and in e-toys like drones.
The IRS2007S includes integrated dead-time and shoot-through protection.
It also features low quiescent currents, tolerance of negative transient voltage and dV/dt immunity. Therefore, the gate driver ensures the device reliability and reduces the BOM.
Similar to other members of the 200 V level-shift gate driver family, IRS2007S also utilizes Infineon’s advanced high-voltage IC technology to realize a compact, efficient and robust monolithic construction.
A smaller MLPQ 4×4 14L (VQFN-14) package option is also available in the family.
The 200 V level-shift gate driver family comprises three-phase, half-bridge, and high and low side gate driver ICs, in both, Silicon-on-Insulator (SOI) and Junction Isolation (JI) options.
The three-phase gate driver ICs utilize Infineon’s SOI technology to provide functional isolation with industry leading negative V S robustness and reduced level shift losses.
Additionally, the SOI solution comes with integrated bootstrap diodes (BSD) to further reduce overall cost, simplify layout, and reduce PCB size.
It is a new member of the EiceDRIVER 200 V level-shift gate driver family.
Featuring undervoltage-lockout (UVLO) for V CC and V BS, the IRS2007S is tailored for low voltage (24 V, 36 V, and 48 V) and medium voltage (60 V, 80 V, 100 V, and 120 V) motor control applications in battery driven devices.
They are typically found in power tools, household and garden equipment, as well as in light electric vehicles such as e-bikes and e-scooters, and in e-toys like drones.
The IRS2007S includes integrated dead-time and shoot-through protection.
It also features low quiescent currents, tolerance of negative transient voltage and dV/dt immunity. Therefore, the gate driver ensures the device reliability and reduces the BOM.
Similar to other members of the 200 V level-shift gate driver family, IRS2007S also utilizes Infineon’s advanced high-voltage IC technology to realize a compact, efficient and robust monolithic construction.
A smaller MLPQ 4×4 14L (VQFN-14) package option is also available in the family.
The 200 V level-shift gate driver family comprises three-phase, half-bridge, and high and low side gate driver ICs, in both, Silicon-on-Insulator (SOI) and Junction Isolation (JI) options.
The three-phase gate driver ICs utilize Infineon’s SOI technology to provide functional isolation with industry leading negative V S robustness and reduced level shift losses.
Additionally, the SOI solution comes with integrated bootstrap diodes (BSD) to further reduce overall cost, simplify layout, and reduce PCB size.
