Samsung starts mass production of LPDDR4X DRAM
- 著者:Ella Cai
- 公開：:2018-07-26
Samsung has begun mass producing 2nd-generation 10nm-class (10-19nm) LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of smartphones and other mobile applications.
Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd– generation LPDDR4X DRAM features up to a 10% power reduction while maintaining the same data rate of 4,266Mb/s.
Samsung will be expanding its premium DRAM lineup that is based on the 10nm process by more than 70%. This initiative began with mass producing the first 10nm-class 8Gb DDR4 server DRAM last November and continues with this 16Gb LPDDR4X mobile memory chip only eight months later.
Samsung said that it has created an 8GB LPDDR4X mobile DRAM package by combining four of the 10nm-class 16Gb LPDDR4X DRAM chips(16Gb=2GB).
This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20 percent from the 1st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.
With its LPDDR4X, Samsung will be providing a variety of products, including 4GB, 6GB and 8GB LPDDR4X packages.
In line with its roll-out of 10nm-class LPDDR4X, Samsung has started operating a new DRAM production line in Pyeongtaek, Korea, to assure a stable supply of all mobile DRAM chips, in response to the increasing demand.
TIMELINE: Samsung’s Mass Production History of Mobile DRAM since 2012
1) 2012.08 2GB 30nm-class 4Gb LPDDR3, 1600Mb/s
2) 2013.04 2GB 20nm-class (2y) 4Gb LPDDR3, 2133Mb/s
3) 2013.11 3GB 20nm-class (2y) 6Gb LPDDR3, 2133Mb/s
4) 2014.09 3GB 20nm-class (2z) 6Gb LPDDR3, 2133Mb/s
5) 2014.12 4GB 20nm-class (2z) 8Gb LPDDR4, 3200Mb/s
6) 2015.08 6GB 20nm-class (2z) 12Gb LPDDR4, 4266Mb/s
7) 2016.09 8GB 10nm-class (1x) 16Gb LPDDR4, 4266Mb/s
8) 2018.07 8GB 10nm-class (1y) 16Gb LPDDR4X, 4266Mb/s
* 2018.07 Develops 10nm-class 8Gb LPDDR5, 6400Mb/s
Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd– generation LPDDR4X DRAM features up to a 10% power reduction while maintaining the same data rate of 4,266Mb/s.
Samsung will be expanding its premium DRAM lineup that is based on the 10nm process by more than 70%. This initiative began with mass producing the first 10nm-class 8Gb DDR4 server DRAM last November and continues with this 16Gb LPDDR4X mobile memory chip only eight months later.
Samsung said that it has created an 8GB LPDDR4X mobile DRAM package by combining four of the 10nm-class 16Gb LPDDR4X DRAM chips(16Gb=2GB).
This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20 percent from the 1st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.
With its LPDDR4X, Samsung will be providing a variety of products, including 4GB, 6GB and 8GB LPDDR4X packages.
In line with its roll-out of 10nm-class LPDDR4X, Samsung has started operating a new DRAM production line in Pyeongtaek, Korea, to assure a stable supply of all mobile DRAM chips, in response to the increasing demand.
TIMELINE: Samsung’s Mass Production History of Mobile DRAM since 2012
1) 2012.08 2GB 30nm-class 4Gb LPDDR3, 1600Mb/s
2) 2013.04 2GB 20nm-class (2y) 4Gb LPDDR3, 2133Mb/s
3) 2013.11 3GB 20nm-class (2y) 6Gb LPDDR3, 2133Mb/s
4) 2014.09 3GB 20nm-class (2z) 6Gb LPDDR3, 2133Mb/s
5) 2014.12 4GB 20nm-class (2z) 8Gb LPDDR4, 3200Mb/s
6) 2015.08 6GB 20nm-class (2z) 12Gb LPDDR4, 4266Mb/s
7) 2016.09 8GB 10nm-class (1x) 16Gb LPDDR4, 4266Mb/s
8) 2018.07 8GB 10nm-class (1y) 16Gb LPDDR4X, 4266Mb/s
* 2018.07 Develops 10nm-class 8Gb LPDDR5, 6400Mb/s
