Samsung tries to catch up Everspin on MRAM
- 著者:Ella Cai
- 公開：:2017-09-26
Samsung has taped out a 28nm FD-SOI MRAM and is preparing to use eMRAM as a core for SoCs.
The technology was developed with IBM and Infineon and its first use will be in an NXP i.MX processor.
Volume production is scheduled for 2018.
Samsung is catching up with Everspin whose MRAM is made by Globalfoundries on a 28nm CMOS process.
Everspin has developed a 1Gbit MRAM core which it will use in its nvNITRO storage accelerators which deliver extremely fast read and write times with ultra-low latency.
The technology was developed with IBM and Infineon and its first use will be in an NXP i.MX processor.
Volume production is scheduled for 2018.
Samsung is catching up with Everspin whose MRAM is made by Globalfoundries on a 28nm CMOS process.
Everspin has developed a 1Gbit MRAM core which it will use in its nvNITRO storage accelerators which deliver extremely fast read and write times with ultra-low latency.
