GaN IFF avionics transistor with 120W peak output power
- 저자:Ella Cai
- 에 출시:2018-08-16
Integra Technologies, the El Segundo RF and microwave transistor and amplifier specialist, is offering an IFF avionics transistor offering 120W peak output power using GaN technology.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 – 1.09 GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid. This 100% high power RF tested transistor for new designs has 17dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 – 1.09 GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid. This 100% high power RF tested transistor for new designs has 17dB of gain and a drain efficiency of 75% at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% duty cycle.
