Shottky for back-flow protection leaks and heats less
- 저자:Ella Cai
- 에 출시:2018-07-11
Toshiba has launched a Schottky barrier diode aimed at rectification and back-flow prevention.
Called CUHS10F60, due to the newly developed 2.5 x 1.4mm US2H package (SOD-323HE) it features a thermal resistance of 105°C/W. “The package’s thermal resistance has been reduced by about 50% compared to the conventional USC package,” said the firm.
In comparison to Toshiba’s earlier CUS04 Schottky diode, maximum reverse current has been reduced by around 60% – to 40µA.
Reverse voltage is high for a silicon Schottky – 60V (the leakage above is measured at this value)- while forward voltage is typically 0.46V at 500mA and 0.56V at the device’s maximum current of 1A.
The Schottky is available for shipping in production quantities now.
Called CUHS10F60, due to the newly developed 2.5 x 1.4mm US2H package (SOD-323HE) it features a thermal resistance of 105°C/W. “The package’s thermal resistance has been reduced by about 50% compared to the conventional USC package,” said the firm.
In comparison to Toshiba’s earlier CUS04 Schottky diode, maximum reverse current has been reduced by around 60% – to 40µA.
Reverse voltage is high for a silicon Schottky – 60V (the leakage above is measured at this value)- while forward voltage is typically 0.46V at 500mA and 0.56V at the device’s maximum current of 1A.
The Schottky is available for shipping in production quantities now.
