Infineon adds to CoolMOS line
- Autor:Ella Cai
- Solte em:2017-03-31
Infineon is adding to its CoolMOS portfolio with the 600 V CoolMO P7 and 600 V CoolMOS C7 Gold (G7) series.
The product families are designed to operate at 600 V breakdown voltage and deliver improved superjunction MOSFET performance.
The P7 is targeting applications such as chargers, adapters, lighting, TV, PC power, solar, server, telecom and EV charging.
It is addressing power classes from 100 W to 15 kW.
The P7 enables efficiency gains of up to 1.5 percent in the various topologies, and offers up to 4.2 °C thermal benefits compared to the competition.
The R DS(on) range from 37 mΩ to 600 mΩ for both surface mount (SMD) and through hole packages makes the 600 V CoolMOS P7 suitable for a broad variety of applications and power ranges.
In addition, ESD robustness of more than 2 kV (HBM) protects the device from electro static discharge damage in production, thus offering higher manufacturing quality. Finally, the rugged body diode protects the device during hard commutation events in LLC circuits.
The G7 features a lower R DS(on), minimized gate charge Q G, reduced energy stored in the output capacitance, and a 4 pin Kelvin source capability of the TO-Leadless package. This minimizes losses in PFC and LLC circuits and offers a performance gain of 0.6 percent as well as higher full load efficiency in PFC circuits. The low parasitic source inductance of 1 nH also contributes to the increased efficiency levels.
The improved thermal properties in a TO-Leadless package enable the usage in higher current designs while SMD technology allows for a less costly mounting process.
The 600 V CoolMOS C7 Gold features R DS(on), ranging from 28 mΩ to 150 mΩ.
Compared to traditional D²PAK, it offers 30% footprint, 50% height and 60%?space reduction.
The product families are designed to operate at 600 V breakdown voltage and deliver improved superjunction MOSFET performance.
The P7 is targeting applications such as chargers, adapters, lighting, TV, PC power, solar, server, telecom and EV charging.
It is addressing power classes from 100 W to 15 kW.
The P7 enables efficiency gains of up to 1.5 percent in the various topologies, and offers up to 4.2 °C thermal benefits compared to the competition.
The R DS(on) range from 37 mΩ to 600 mΩ for both surface mount (SMD) and through hole packages makes the 600 V CoolMOS P7 suitable for a broad variety of applications and power ranges.
In addition, ESD robustness of more than 2 kV (HBM) protects the device from electro static discharge damage in production, thus offering higher manufacturing quality. Finally, the rugged body diode protects the device during hard commutation events in LLC circuits.
The G7 features a lower R DS(on), minimized gate charge Q G, reduced energy stored in the output capacitance, and a 4 pin Kelvin source capability of the TO-Leadless package. This minimizes losses in PFC and LLC circuits and offers a performance gain of 0.6 percent as well as higher full load efficiency in PFC circuits. The low parasitic source inductance of 1 nH also contributes to the increased efficiency levels.
The improved thermal properties in a TO-Leadless package enable the usage in higher current designs while SMD technology allows for a less costly mounting process.
The 600 V CoolMOS C7 Gold features R DS(on), ranging from 28 mΩ to 150 mΩ.
Compared to traditional D²PAK, it offers 30% footprint, 50% height and 60%?space reduction.
